advanced power n and p-channel enhancement electronics corp. mode power mosfet simple drive requirement n-ch bv dss 30v low on-resistance r ds(on) 28m fast switching performance i d 6.9a p-ch bv dss -30v r ds(on) 36m description i d -6.3a absolute maximum ratings symbol parameter rating units n-channel p-channel v ds drain-source voltage 30 -30 v v gs gate-source voltage + 20 + 20 v i d @t a =25 continuous drain current 3 6.9 -6.3 a i d @t a =70 continuous drain current 3 5.5 -5 a i dm pulsed drain current 1 30 -30 a p d @t a =25 total power dissipation 2.0 w linear derating factor 0.016 w/ t stg storage temperature range -55 to 150 t j operating junction temperature range -55 to 150 symbol value unit rthj-a maximum thermal resistance, junction-ambient 3 62.5 /w data and specifications subject to change without notice 201010083 parameter 1 thermal data ap4503gm rohs-compliant product advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost- effectiveness. the so-8 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as dc/dc converters. g2 d2 s2 g1 d1 s1 s1 g1 s2 g2 d1 d1 d2 d2 so-8
n-ch electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 30 - - v ? bv dss / ? t j breakdown voltage temperature coefficient reference to 25 , i d =1ma - 0.005 -v/ r ds(on) static drain-source on-resistance 2 v gs =10v, i d =6a - - 28 m v gs =4.5v, i d =4a - - 42 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =6a - 5.7 - s i dss drain-source leakage current v ds =30v, v gs =0v - - 1 ua drain-source leakage current (t j =70 o c) v ds =24v, v gs =0v - - 25 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge 2 i d =6a - 9 15 nc q gs gate-source charge v ds =24v - 2 - nc q gd gate-drain ("miller") charge v gs =4.5v - 6 - nc t d(on) turn-on delay time 2 v ds =15v - 8 - ns t r rise time i d =1a - 7 - ns t d(off) turn-off delay time r g =3.3 ? ,v gs =10v - 19 - ns t f fall time r d =15 ? -6- ns c iss input capacitance v gs =0v - 610 970 pf c oss output capacitance v ds =25v - 160 - pf c rss reverse transfer capacitance f=1.0mhz - 120 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =6a, v gs =0v - - 1.2 v i s continuous source current ( body diode ) v d =v g =0v , v s =1.2v - - 1.7 a t rr reverse recovery time 2 i s =6a, v gs =0v - 18 - ns q rr reverse recovery charge di/dt=100a/s - 11 - nc ap4503gm 2
ap4503gm p-ch electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -30 - - v ? bv dss / ? t j breakdown voltage temperature coefficient reference to 25 ,i d =-1ma - -0.004 -v/ r ds(on) static drain-source on-resistance 2 v gs =-10v, i d =-6a - - 36 m v gs =-4.5v, i d =-4a - - 55 m v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -1 - -3 v g fs forward transconductance v ds =-10v, i d =-6a - 5.8 - s i dss drain-source leakage current v ds =-30v, v gs =0v - - -1 ua drain-source leakage current (t j =70 o c) v ds =-24v, v gs =0v - - -25 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge 2 i d =-6a - 9 24 nc q gs gate-source charge v ds =-24v - 2 - nc q gd gate-drain ("miller") charge v gs =-4.5v - 5 - nc t d(on) turn-on delay time 2 v ds =-15v - 12 - ns t r rise time i d =-1a - 8 - ns t d(off) turn-off delay time r g =3.3 ? ,v gs =-10v - 42 - ns t f fall time r d =15 ? -34- ns c iss input capacitance v gs =0v - 960 1540 pf c oss output capacitance v ds =-25v - 300 - pf c rss reverse transfer capacitance f=1.0mhz - 220 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =-6a, v gs =0v - - -1.2 v i s continuous source current ( body diode ) v d =v g =0v , v s =-1.2v - - -1.7 a t rr reverse recovery time 2 i s =-6a, v gs =0v - 24 - ns q rr reverse recovery charge di/dt=-100a/s - 18 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.surface mounted on 1 in 2 copper pad of fr4 board ; 135 /w when mounted on min. copper pad. this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. a pec does not assume any liability arising out of the application or use of any product or circuit describe d herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 3
n-channel fig 1. typical output characteristics fig 2. typical output characteristics -6.3 -5 fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature ap4503gm 4 18 22 26 30 34 38 42 246810 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =6a t a =25 o c 0 20 40 60 80 100 01234567 v ds , drain-to-source voltage (v) i d , drain current (a) t a =25 o c v g =3.0v 10v 7.0v 5.0v 4.5v 0 10 20 30 40 50 60 70 012345 v ds , drain-to-source voltage (v) i d , drain current (a) t a =150 o c v g =3.0v 10v 7.0v 5.0v 4.5v 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 0 50 100 150 t j ,junction temperature ( o c) normalized r ds(on) i d =6a v g =10v 0 0.5 1 1.5 2 -50 0 50 100 150 t j ,junction temperature ( o c) v gs(th) (v) 0 1 2 3 4 5 6 7 0 0.2 0.4 0.6 0.8 1 1.2 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c
ap4503gm n-channel fig 7. gate charge characteristics fig 8. typical capacitance characteristics -6.3 -5 fig 9. maximum safe operating area fi g 10. effective transient thermal im p edanc e fig 11. switching time waveform fig 12. gate charge waveform 5 t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 4.5v q gs q gd q g charge 0 2 4 6 8 10 12 0481216 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =6a v ds =24v 10 100 1000 10000 1 5 9 13 17 21 25 29 v ds , drain-to-source voltage (v) c (pf) f =1.0mhz c iss c oss c rss 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = p dm x r thja + t a rthja=135 o c/w t t 0.02 0.01 0.05 0.1 0.2 dity factor=0.5 single pulse 0.01 0.1 1 10 100 0.01 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) t a =25 o c single pulse 100us 1ms 10ms 100ms 1s 10s dc operation in this area limited by r ds(on)
p-channel fig 1. typical output characteristics fig 2. typical output characteristics -6.3 -5 fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 6 ap4503gm 0 20 40 60 80 100 01234567 -v ds , drain-to-source voltage (v) -i d , drain current (a) t a =25 o c -10v -7.0v -5.0v -4.5v v g =-3.0v 20 30 40 50 60 246810 -v gs ,gate-to-source voltage (v) r ds(on) (m ) i d =-6a t a =25 o c 0.6 0.8 1.0 1.2 1.4 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =-6a v g =10v 1 1.5 2 2.5 -50 0 50 100 150 t j ,junction temperature ( o c) -v gs(th) (v) 0 1 2 3 4 5 6 7 0 0.2 0.4 0.6 0.8 1 1.2 -v sd , source-to-drain voltage (v) -i s (a) t j =25 o c t j =150 o c 0 10 20 30 40 50 60 70 01234 -v ds , drain-to-source voltage (v) -i d , drain current (a) t a =150 o c v g =-3.0v -10v -7.0v -5.0v -4.5v
ap4503gm p-channel fig 7. gate charge characteristics fig 8. typical capacitance characteristics -6.3 -5 fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 7 t d(on) t r t d(off) t f v ds v gs 10% 90% q v g -4.5v q gs q gd q g charge 0 2 4 6 8 10 0.0 5.0 10.0 15.0 20.0 q g , total gate charge (nc) -v gs , gate to source voltage (v) i d =-6a v ds =-24v 10 100 1000 10000 1 5 9 1317212529 -v ds , drain-to-source voltage (v) c (pf) f =1.0mhz c iss c oss c rss 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = p dm x r thja + t a rthja=135 o c/w t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0.01 0.1 1 10 100 0.01 0.1 1 10 100 -v ds , drain-to-source voltage (v) -i d (a) t a =25 o c single pulse 100us 1ms 10ms 100ms 1s 10s dc operation in this area limited by r ds(on)
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